STGBL6NC60DIT4

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STGBL6NC60DIT4概述

Trans IGBT Chip N-CH 600V 14A 3Pin2+Tab D2PAK T/R

IGBT - 600 V 14 A 56 W 表面贴装型 D2PAK


得捷:
IGBT 600V 14A 56W D2PAK


艾睿:
This STGBL6NC60DIT4 IGBT transistor from STMicroelectronics is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 56000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.


Chip1Stop:
Trans IGBT Chip N-CH 600V 14A 3-Pin2+Tab D2PAK T/R


Win Source:
IGBT 600V 14A 56W D2PAK


STGBL6NC60DIT4中文资料参数规格
技术参数

耗散功率 56000 mW

击穿电压集电极-发射极 600 V

反向恢复时间 23 ns

额定功率Max 56 W

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 56 W

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-263-3

外形尺寸

封装 TO-263-3

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Not Recommended for New Designs

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买STGBL6NC60DIT4
型号: STGBL6NC60DIT4
描述:Trans IGBT Chip N-CH 600V 14A 3Pin2+Tab D2PAK T/R

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