STMICROELECTRONICS STGF6NC60HD 单晶体管, IGBT, 6 A, 2.5 V, 20 W, 600 V, TO-220FP, 3 引脚
IGBT 分立,STMicroelectronics
得捷:
IGBT 600V 6A 20W TO220FP
欧时:
STMicroelectronics STGF6NC60HD N沟道 IGBT, 6 A, Vce=600 V, 1MHz, 3引脚 TO-220FP封装
立创商城:
STGF6NC60HD
贸泽:
IGBT 晶体管 PowerMESH" IGBT
艾睿:
Minimize the current at your gate with the STGF6NC60HD IGBT transistor from STMicroelectronics. Its maximum power dissipation is 20000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
富昌:
STGF6NC60HD 系列 N 沟道 600 V 3 A 极快速 PowerMESH IGBT - TO-220FP
Chip1Stop:
Trans IGBT Chip N-CH 600V 6A 3-Pin3+Tab TO-220FP Tube
Verical:
Trans IGBT Chip N-CH 600V 6A 20000mW 3-Pin3+Tab TO-220FP Tube
Newark:
# STMICROELECTRONICS STGF6NC60HD IGBT Single Transistor, 6 A, 2.5 V, 20 W, 600 V, TO-220FP, 3 Pins
力源芯城:
3A,600V,快速IGBT
DeviceMart:
IGBT N-CH 600V 6A TO-220FP
额定电压DC 600 V
额定电流 6.00 A
针脚数 3
极性 N-Channel
耗散功率 20 W
上升时间 5.00 ns
击穿电压集电极-发射极 600 V
反向恢复时间 21 ns
额定功率Max 20 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 20 W
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.4 mm
宽度 4.6 mm
高度 16.4 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 电机驱动与控制, Power Management, 电源管理, Motor Drive & Control
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/12/17
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STGF6NC60HD ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
IRG4IBC10UDPBF 国际整流器 | 功能相似 | STGF6NC60HD和IRG4IBC10UDPBF的区别 |