SGB02N120

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SGB02N120概述

快速S- IGBT在NPT技术 Fast S-IGBT in NPT-technology

Summary of Features:

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30% lower E off compared to previous generation
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Short circuit withstand time – 10μs
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Designed for operation above 30kHz
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High ruggedness, temperature stable behaviour
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Pb-free lead plating; RoHS compliant
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Qualified according to JEDEC for target applications

Target Applications:

offers a comprehensive IGBT portfolio for the general purpose inverters, solar inverters, UPS, induction heating, microwave oven, rice cookers,  welding and SMPS segments.

SGB02N120中文资料参数规格
技术参数

击穿电压集电极-发射极 1200 V

额定功率Max 62 W

封装参数

安装方式 Surface Mount

封装 TO-263-3

外形尺寸

长度 10 mm

宽度 9.25 mm

高度 4.4 mm

封装 TO-263-3

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Not Recommended for New Design

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

SGB02N120引脚图与封装图
SGB02N120引脚图
SGB02N120封装焊盘图
在线购买SGB02N120
型号: SGB02N120
描述:快速S- IGBT在NPT技术 Fast S-IGBT in NPT-technology

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