N沟道40A - 600V - TO- 247的快速切换的PowerMESH TM IGBT N-channel 40A - 600V - TO-247 Very fast switching PowerMESH TM IGBT
IGBT - 600 V 80 A 250 W 通孔 TO-247-3
得捷:
IGBT 600V 80A 250W TO247
艾睿:
This STGW30NC60VD IGBT transistor from STMicroelectronics is perfect if your circuit contains high currents passing through it. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 250000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Chip1Stop:
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin3+Tab TO-247 Tube
Verical:
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin3+Tab TO-247 Tube
Win Source:
N-channel 40A - 600V - TO-247 Very fast switching PowerMESH TM IGBT
极性 N-Channel
耗散功率 250000 mW
上升时间 11.0 ns
击穿电压集电极-发射极 600 V
反向恢复时间 44 ns
额定功率Max 250 W
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 250000 mW
安装方式 Through Hole
引脚数 3
封装 TO-247-3
宽度 5.16 mm
封装 TO-247-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STGW30NC60VD ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
NGTB40N60IHLWG 安森美 | 功能相似 | STGW30NC60VD和NGTB40N60IHLWG的区别 |
APT40GT60BRG 美高森美 | 功能相似 | STGW30NC60VD和APT40GT60BRG的区别 |
IRGP30B60KD-EPBF 国际整流器 | 功能相似 | STGW30NC60VD和IRGP30B60KD-EPBF的区别 |