STGE50NC60VD

STMICROELECTRONICS  STGE50NC60VD  单晶体管, IGBT, 90 A, 2.5 V, 260 W, 600 V, ISOTOP, 4 引脚

IGBT 分立，STMicroelectronics

### IGBT 分立件和模块，STMicroelectronics

绝缘栅级双极性或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。

得捷:
IGBT MODULE 600V 90A 260W ISOTOP

欧时:
STMicroelectronics STGE50NC60VD N沟道 IGBT, Vce=600 V, 90 A, 1MHz, 4引脚 ISOTOP封装

e络盟:
STMICROELECTRONICS  STGE50NC60VD  单晶体管, IGBT, 90 A, 2.5 V, 260 W, 600 V, ISOTOP, 4 引脚

艾睿:
The STGE50NC60VD IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 260000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Chip1Stop:
Trans IGBT Chip N-CH 600V 80A 4-Pin ISOTOP Tube

Newark:
IGBT Single Transistor, 90 A, 2.5 V, 260 W, 600 V, ISOTOP, 4