SMBTA42E6327HTSA1

SMBTA42 系列 NPN 300 V 500 mA 表面贴装 硅 高压 晶体管 - SOT-23-3

高电压，

得捷:
TRANS NPN 300V 0.5A SOT23

欧时:
Infineon SMBTA42E6327HTSA1 , NPN 高压双极晶体管, 500 mA, Vce=300 V, HFE:40, 70 MHz, 3引脚 SOT-23封装

贸泽:
双极晶体管 - 双极结型晶体管BJT NPN 300 V 500 mA

艾睿:
The versatility of this NPN SMBTA42E6327HTSA1 GP BJT from Infineon Technologies makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 360 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V.

Chip1Stop:
Trans GP BJT NPN 300V 0.5A Automotive 3-Pin SOT-23 T/R

Verical:
Trans GP BJT NPN 300V 0.5A 360mW Automotive 3-Pin SOT-23 T/R