SOT-23 N-CH 60V 0.2A
N-Channel 60V 200mA Ta 360mW Ta Surface Mount SOT-23-3
欧时:
INFINEON MOSFET SN7002NH6433XTMA1
得捷:
MOSFET N-CH 60V 200MA SOT23-3
贸泽:
MOSFET SMALL SIGNAL+P-CH
艾睿:
Create an effective common drain amplifier using this SN7002NH6433XTMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 360 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes sipmos technology.
安富利:
Trans MOSFET N-CH 60V 0.2A 3-Pin SOT-23 T/R
TME:
Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23
Verical:
Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R
通道数 1
漏源极电阻 2.5 Ω
极性 N-CH
耗散功率 360 mW
阈值电压 800 mV
漏源极电压Vds 60 V
漏源击穿电压 60 V
连续漏极电流Ids 0.2A
上升时间 3.2 ns
输入电容Ciss 45pF @25VVds
下降时间 3.6 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 360mW Ta
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 2.9 mm
宽度 1.3 mm
高度 1.1 mm
封装 SOT-23-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 无铅