SD57060-01

SD57060-01 系列 945 MHz 60 W 65 V N-沟道 射频 功率晶体管 - M-250

N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs

**DESCRIPTION**

The is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57060-01 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base station applications requiring high linearity.

■ EXCELLENT THERMAL STABILITY

■ COMMON SOURCE CONFIGURATION

■ POUT = 60 W with 11.5 dB gain @ 945 MHz

■ BeO FREE PACKAGE