STAC2932FW

STAC2932FW图片1
STAC2932FW图片2
STAC2932FW概述

射频金属氧化物半导体场效应RF MOSFET晶体管 300W 50V RF MOS 20dB 175MHz N-Ch

This RF amplifier from STMicroelectronics works in radio frequency environments and can be used to amplify and switch between electronic signals. Its maximum power dissipation is 625000 mW. This component comes in tray packaging, useful for fast picking and placing of your parts. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 250 MHz.

STAC2932FW中文资料参数规格
技术参数

频率 175 MHz

耗散功率 625 W

漏源极电压Vds 125 V

输出功率 300 W

增益 20 dB

测试电流 250 mA

输入电容Ciss 468pF @50VVds

工作温度Max 200 ℃

工作温度Min -65 ℃

耗散功率Max 625000 mW

额定电压 125 V

封装参数

引脚数 5

封装 STAC244F

外形尺寸

高度 4.32 mm

封装 STAC244F

其他

产品生命周期 Active

包装方式 Bulk

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买STAC2932FW
型号: STAC2932FW
描述:射频金属氧化物半导体场效应RF MOSFET晶体管 300W 50V RF MOS 20dB 175MHz N-Ch

锐单商城 - 一站式电子元器件采购平台