LdmoST 系列 N沟道 增强模式 场效应 射频 功率晶体管
Amplifying and switching electronic signals in radio frequency environments is easy with this RF amplifier from STMicroelectronics. Its maximum power dissipation is 74000 mW. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 200 °C.
得捷:
FET RF 65V 945MHZ M250
贸泽:
射频金属氧化物半导体场效应RF MOSFET晶体管 N-Ch 65 Volt 4 Amp
艾睿:
Amplifying and switching electronic signals in radio frequency environments is easy with this SD57030-01 RF amplifier from STMicroelectronics. Its maximum power dissipation is 74000 mW. Its maximum frequency is 1000 MHz. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has an operating temperature range of -65 °C to 200 °C.
安富利:
Trans MOSFET N-CH 65V 4A 3-Pin Case M-250
Chip1Stop:
Trans RF MOSFET N-CH 65V 4A 3-Pin Case M-250
DeviceMart:
TRANSISTOR RF PWR LDMOST M250
频率 945 MHz
额定电压DC 65.0 V
额定电流 4 A
极性 N-Channel
耗散功率 74 W
输入电容 58.0 pF
漏源极电压Vds 65 V
漏源击穿电压 65.0 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 4.00 A
输出功率 30 W
增益 15 dB
测试电流 50 mA
输入电容Ciss 58pF @28VVds
工作温度Max 200 ℃
工作温度Min -65 ℃
耗散功率Max 74000 mW
额定电压 65 V
安装方式 Surface Mount
引脚数 3
封装 M-250
长度 9.91 mm
宽度 6.09 mm
高度 3.94 mm
封装 M-250
工作温度 -65℃ ~ 200℃
产品生命周期 Active
包装方式 Bulk
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
SD57030-01 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
SD57030 意法半导体 | 类似代替 | SD57030-01和SD57030的区别 |