SD2918

射频功率晶体管HF / VHF / UHF N沟道MOSFET RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

RF Mosfet N 通道 50 V 100 mA 30MHz 22dB 30W M113

得捷:
TRANS RF N-CH HF/VHF/UHF M113

贸泽:
射频金属氧化物半导体场效应RF MOSFET晶体管 N-Ch 125 Volt 6 Amp

艾睿:
Used in radio frequency environments, this SD2918 RF amplifier made from STMicroelectronics is ideal for amplifying and switching between electronic signals. Its maximum power dissipation is 175000 mW. This component will be shipped in tray format. This N channel RF power MOSFET operates in enhancement mode. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C. Its maximum frequency is 200 MHz.

安富利:
Trans MOSFET N-CH 125V 6A 4-Pin4+Tab Case M113 Tray

富昌:
SD29系列 50 V 射频 功率晶体管 HF/VHF/UHF N沟道 MOSFET

Chip1Stop:
Trans RF MOSFET N-CH 125V 6A 4-Pin Case M-113 Tray

Verical:
Trans RF MOSFET N-CH 125V 6A 4-Pin Case M-113 Loose

Newark:
# STMICROELECTRONICS  SD2918  RF FET Transistor, 5 V, 6 A, 175 W, M113

DeviceMart:
TRANS RF N-CH HF/VHF/UHF M113