SN7002NL6327HTSA1

SN7002NL6327HTSA1图片1
SN7002NL6327HTSA1概述

SOT-23 N-CH 60V 0.2A

Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Technologies" power MOSFET can provide a solution. Its maximum power dissipation is 360 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes sipmos technology.

SN7002NL6327HTSA1中文资料参数规格
技术参数

极性 N-CH

耗散功率 0.36 W

漏源极电压Vds 60 V

连续漏极电流Ids 0.2A

上升时间 3.2 ns

输入电容Ciss 34pF @25VVds

下降时间 3.6 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 360 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SOT-23

外形尺寸

封装 SOT-23

其他

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买SN7002NL6327HTSA1
型号: SN7002NL6327HTSA1
制造商: Infineon 英飞凌
描述:SOT-23 N-CH 60V 0.2A

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