通用晶体管NPN硅集电极的????发射极电压VCEO 45 General Purpose Transistors NPN Silicon Collector â Emitter Voltage VCEO 45
- 双极 BJT - 单 NPN 100MHz 表面贴装型 SOT-23-3(TO-236)
得捷:
TRANS NPN 45V 0.5A SOT23-3
立创商城:
SBC817-40LT3G
艾睿:
ON Semiconductor brings you the solution to your high-voltage BJT needs with their NPN SBC817-40LT3G general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
Verical:
Trans GP BJT NPN 45V 0.5A 300mW Automotive 3-Pin SOT-23 T/R
DeviceMart:
TRANS NPN 45V 500MA SOT-23
频率 100 MHz
无卤素状态 Halogen Free
针脚数 3
极性 NPN
耗散功率 0.3 W
击穿电压集电极-发射极 45 V
集电极最大允许电流 0.5A
最小电流放大倍数hFE 250 @100mA, 1V
额定功率Max 300 mW
直流电流增益hFE 40
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 300 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
材质 Silicon
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
SBC817-40LT3G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
BC817-40LT3 安森美 | 完全替代 | SBC817-40LT3G和BC817-40LT3的区别 |
BC817-40LT1G 安森美 | 类似代替 | SBC817-40LT3G和BC817-40LT1G的区别 |
BC817-40LT3G 安森美 | 类似代替 | SBC817-40LT3G和BC817-40LT3G的区别 |