Infineon SMBT3904UPNE6327HTSA1, 双 NPN + PNP 晶体管, 200 mA, Vce=40 V, HFE:30, 250(最小)MHz, 6引脚
双 NPN/PNP ,
得捷:
TRANS NPN/PNP 40V 0.2A SC74-6
欧时:
Infineon SMBT3904UPNE6327HTSA1, 双 NPN + PNP 晶体管, 200 mA, Vce=40 V, HFE:30, 250(最小)MHz, 6引脚
艾睿:
This specially engineered npn and PNP SMBT3904UPNE6327HTSA1 GP BJT from Infineon Technologies comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
安富利:
Trans GP BJT NPN/PNP 40V 0.2A 6-Pin SC74 T/R
额定电压DC 40.0 V
额定电流 200 mA
极性 NPN+PNP
击穿电压集电极-发射极 40 V
集电极最大允许电流 0.2A
最小电流放大倍数hFE 100 @10mA, 1V
额定功率Max 330 mW
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 330 mW
安装方式 Surface Mount
引脚数 6
封装 SC-74-6
长度 2.9 mm
宽度 1.6 mm
高度 1 mm
封装 SC-74-6
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free