SMBTA92E6327HTSA1

Infineon SMBTA92E6327HTSA1 , PNP 晶体管, 500 mA, Vce=300 V, HFE:25, 50 MHz, 3引脚 SOT-23封装

高电压，

得捷:
TRANS PNP 300V 0.5A SOT23

欧时:
Infineon SMBTA92E6327HTSA1 , PNP 晶体管, 500 mA, Vce=300 V, HFE:25, 50 MHz, 3引脚 SOT-23封装

贸泽:
Bipolar Transistors - BJT AF TRANS GP BJT PNP 300V 0.5A

艾睿:
Add switching and amplifying capabilities to your electronic circuit with this PNP SMBTA92E6327HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 360 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V.

Chip1Stop:
Trans GP BJT PNP 300V 0.5A Automotive 3-Pin SOT-23 T/R

Verical:
Trans GP BJT PNP 300V 0.5A 360mW Automotive 3-Pin SOT-23 T/R

Win Source:
TRANS PNP 300V 0.5A SOT-23