SMBT3906SH6327XTSA1

Infineon SMBT3906SH6327XTSA1 , PNP 晶体管, 200 mA, Vce=40 V, HFE:30, 250（最小）MHz, 6引脚

小信号 PNP ，

得捷:
TRANS 2PNP 40V 0.2A SOT363

欧时:
Infineon SMBT3906SH6327XTSA1 , PNP 晶体管, 200 mA, Vce=40 V, HFE:30, 250（最小）MHz, 6引脚

艾睿:
Infineon Technologies has the solution to your circuit&s;s high-voltage requirements with their PNP SMBT3906SH6327XTSA1 general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.

安富利:
Trans GP BJT PNP 40V 0.2A 6-Pin SOT-363 T/R

Verical:
Trans GP BJT PNP 40V 0.2A Automotive 6-Pin SOT-363 T/R