SBC807-25LT1G

单晶体管 双极, PNP, -45 V, 100 MHz, 225 mW, -500 mA, 160 hFE

- 双极 BJT - 单 PNP 100MHz 表面贴装型 SOT-23-3（TO-236）

得捷:
TRANS PNP 45V 0.5A SOT23-3

立创商城:
SBC807-25LT1G

e络盟:
单晶体管 双极, PNP, -45 V, 100 MHz, 225 mW, -500 mA, 160 hFE

艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP SBC807-25LT1G GP BJT from ON Semiconductor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans GP BJT PNP 45V 0.5A 3-Pin SOT-23 T/R

Chip1Stop:
Trans GP BJT PNP 45V 0.5A Automotive 3-Pin SOT-23 T/R

Verical:
Trans GP BJT PNP 45V 0.5A 300mW Automotive 3-Pin SOT-23 T/R

Win Source:
TRANS PNP 45V 0.5A SOT-23