数字晶体管( BRT ) R1 = 10千欧, R2 = 47 K· Digital Transistors BRT R1 = 10 k, R2 = 47 k
The PNP digital transistor from is your alternative to traditional BJTs in that it can provide digital signal processing power. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. Its maximum power dissipation is 310 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
无卤素状态 Halogen Free
极性 PNP
耗散功率 310 mW
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 80 @5mA, 10V
最大电流放大倍数hFE 80
额定功率Max 202 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 310 mW
安装方式 Surface Mount
引脚数 3
封装 SC-70-3
长度 2.1 mm
宽度 1.24 mm
高度 0.85 mm
封装 SC-70-3
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
SMUN5114T1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
SMUN5114T3G 安森美 | 类似代替 | SMUN5114T1G和SMUN5114T3G的区别 |