SMUN2214T1G

数字晶体管（ BRT ） R1 = 10千欧， R2 = 47 K· Digital Transistors BRT R1 = 10 k, R2 = 47 k

- 双极 BJT - 单，预偏置 NPN - 预偏压 50 V 100 mA 230 mW 表面贴装型 SC-59

得捷:
TRANS PREBIAS NPN 50V 100MA SC59

立创商城:
SMUN2214T1G

贸泽:
Bipolar Transistors - Pre-Biased SS SC59 BR XSTR PNP 50V

艾睿:
Compared to traditional BJ transistors, the NPN SMUN2214T1G digital transistor from ON Semiconductor is meant to be used with digital signal processing circuits. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 338 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It is made in a single configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans Digital BJT NPN 50V 100mA 3-Pin SC-59 T/R

Chip1Stop:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SC-59 T/R

Verical:
Trans Digital BJT NPN 50V 100mA 338mW Automotive 3-Pin SC-59 T/R