SMUN5133T1G

SMUN5133T1G图片1
SMUN5133T1G图片2
SMUN5133T1G图片3
SMUN5133T1G图片4
SMUN5133T1G图片5
SMUN5133T1G图片6
SMUN5133T1G概述

数字晶体管( BRT ) R1 = 4.7千欧, R2 = 47 K· Digital Transistors BRT R1 = 4.7 k, R2 = 47 k

Look no further than "s PNP digital transistor, which can provide a solution to your digital signal processing needs. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 310 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

SMUN5133T1G中文资料参数规格
技术参数

无卤素状态 Halogen Free

极性 PNP

耗散功率 0.31 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 80 @5mA, 10V

额定功率Max 202 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 310 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 SC-70-3

外形尺寸

高度 0.85 mm

封装 SC-70-3

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买SMUN5133T1G
型号: SMUN5133T1G
描述:数字晶体管( BRT ) R1 = 4.7千欧, R2 = 47 K· Digital Transistors BRT R1 = 4.7 k, R2 = 47 k

锐单商城 - 一站式电子元器件采购平台