SDTC114EET1G

数字晶体管（ BRT ） R1 = 10千欧， R2 = 10千？ Digital Transistors BRT R1 = 10 k, R2 = 10 k

- 双极 BJT - 单，预偏置 NPN - 预偏压 表面贴装型 SC-75，SOT-416

得捷:
TRANS PREBIAS NPN 50V 100MA SC75

立创商城:
SDTC114EET1G

贸泽:
双极晶体管 - 预偏置 SS SC75 BR XSTR NPN 50V

艾睿:
Thanks to ON Semiconductor&s;s NPN SDTC114EET1G digital transistor, you can easily benefit from the characteristics of traditional BJT s while working with digital systems. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 300 mW. It has a maximum collector emitter voltage of 50 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

安富利:
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-416 T/R

Chip1Stop:
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-416 T/R

Verical:
Trans Digital BJT NPN 50V 100mA 300mW Automotive 3-Pin SOT-416 T/R