双极晶体管 - 双极结型晶体管BJT SS GP XSTR NPN 40V
- 双极 BJT - 单 NPN 40 V 600 mA 300MHz 150 mW 表面贴装型 SC-70-3(SOT323)
得捷:
TRANS NPN 40V 0.6A SC70-3
立创商城:
SMMBT2222AWT1G
贸泽:
双极晶体管 - 双极结型晶体管BJT SS GP XSTR NPN 40V
艾睿:
ON Semiconductor brings you the solution to your high-voltage BJT needs with their NPN SMMBT2222AWT1G general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Chip1Stop:
Trans GP BJT NPN 40V 0.6A Automotive 3-Pin SC-70 T/R
极性 NPN
耗散功率 150 mW
击穿电压集电极-发射极 40 V
集电极最大允许电流 0.6A
最小电流放大倍数hFE 100 @150mA, 10V
额定功率Max 150 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 150 mW
安装方式 Surface Mount
引脚数 3
封装 SC-70-3
封装 SC-70-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
SMMBT2222AWT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MMBT2222AWT1G 安森美 | 完全替代 | SMMBT2222AWT1G和MMBT2222AWT1G的区别 |
MMBT2222AWT3G 安森美 | 类似代替 | SMMBT2222AWT1G和MMBT2222AWT3G的区别 |
MMST2222A-7-F 美台 | 功能相似 | SMMBT2222AWT1G和MMST2222A-7-F的区别 |