1个NPN,1个PNP 45V 100mA
NPN/PNP Duals Complementary
These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications.
Features
•S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 得捷:
TRAN NPN/PNP 45V 0.1A SC88/SC70
立创商城:
SBC847BPDW1T3G
艾睿:
Use this versatile npn and PNP SBC847BPDW1T3G GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor&s;s maximum emitter base voltage is 6@NPN|5@PNP V. Its maximum power dissipation is 380 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6@NPN|5@PNP V.
Verical:
Trans GP BJT NPN/PNP 45V 0.1A 380mW Automotive 6-Pin SC-88 T/R
Win Source:
TRAN NPN/PNP 45V 0.1A SC88/SC70 / Bipolar BJT Transistor Array NPN, PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
频率 100 MHz
极性 NPN+PNP
耗散功率 0.38 W
击穿电压集电极-发射极 45 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 200 @2mA, 5V
额定功率Max 380 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 380 mW
安装方式 Surface Mount
引脚数 6
封装 SOT-363
封装 SOT-363
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
SBC847BPDW1T3G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
BC847BPDW1T1G 安森美 | 功能相似 | SBC847BPDW1T3G和BC847BPDW1T1G的区别 |
SBC847BPDW1T1G 安森美 | 功能相似 | SBC847BPDW1T3G和SBC847BPDW1T1G的区别 |
BC847PN-TP 美微科 | 功能相似 | SBC847BPDW1T3G和BC847PN-TP的区别 |