SBC847BPDW1T3G

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SBC847BPDW1T3G概述

1个NPN,1个PNP 45V 100mA

NPN/PNP Duals Complementary

These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications.

Features

•S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
.

得捷:
TRAN NPN/PNP 45V 0.1A SC88/SC70


立创商城:
SBC847BPDW1T3G


艾睿:
Use this versatile npn and PNP SBC847BPDW1T3G GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor&s;s maximum emitter base voltage is 6@NPN|5@PNP V. Its maximum power dissipation is 380 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6@NPN|5@PNP V.


Verical:
Trans GP BJT NPN/PNP 45V 0.1A 380mW Automotive 6-Pin SC-88 T/R


Win Source:
TRAN NPN/PNP 45V 0.1A SC88/SC70 / Bipolar BJT Transistor Array NPN, PNP 45V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363


SBC847BPDW1T3G中文资料参数规格
技术参数

频率 100 MHz

极性 NPN+PNP

耗散功率 0.38 W

击穿电压集电极-发射极 45 V

集电极最大允许电流 0.1A

最小电流放大倍数hFE 200 @2mA, 5V

额定功率Max 380 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 380 mW

封装参数

安装方式 Surface Mount

引脚数 6

封装 SOT-363

外形尺寸

封装 SOT-363

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买SBC847BPDW1T3G
型号: SBC847BPDW1T3G
描述:1个NPN,1个PNP 45V 100mA
替代型号SBC847BPDW1T3G
型号/品牌 代替类型 替代型号对比

SBC847BPDW1T3G

ON Semiconductor 安森美

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当前型号

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