SBC846BDW1T1G

SBC846BDW1T1G 系列 65 V 100 mA NPN 双 通用 晶体管 - SOT-363

- 双极 BJT - 阵列 2 NPN（双） 65V 100mA 100MHz 380mW 表面贴装型 SC-88/SC70-6/SOT-363

得捷:
TRANS 2NPN 65V 0.1A SC88/SC70-6

立创商城:
SBC846BDW1T1G

欧时:
SS SC88 DUAL NP XSTR GP

贸泽:
Bipolar Transistors - BJT SS DUAL NP XSTR GP

e络盟:
双极晶体管阵列, NPN, 65 V, 380 mW, 100 mA, 200 hFE, SOT-363

艾睿:
Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the NPN SBC846BDW1T1G general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 380 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

安富利:
Trans GP BJT NPN 65V 0.1A 6-Pin SC-88 T/R

Verical:
Trans GP BJT NPN 65V 0.1A 380mW Automotive 6-Pin SC-88 T/R

Newark:
# ON SEMICONDUCTOR  SBC846BDW1T1G  TRANS, AECQ101, NPN, 65V, 0.1A, SOT-363 New