SOT-416 NPN 50V 0.1A
- 双极 BJT - 单 NPN 180MHz 表面贴装型 SC-75,SOT-416
得捷:
TRANS NPN 50V 0.1A SC75 SOT416
立创商城:
S2SC4617G
艾睿:
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN S2SC4617G GP BJT from ON Semiconductor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 125 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
安富利:
Trans GP BJT NPN 50V 0.1A 3-Pin SOT-416 T/R
Chip1Stop:
Trans GP BJT NPN 50V 0.1A Automotive 3-Pin SOT-416 T/R
Verical:
Trans GP BJT NPN 50V 0.1A 125mW Automotive 3-Pin SOT-416 T/R
Win Source:
TRANS NPN 50V 0.1A SC75-3
频率 180 MHz
无卤素状态 Halogen Free
极性 NPN
耗散功率 0.125 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 120 @1mA, 6V
最大电流放大倍数hFE 560
额定功率Max 125 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 125 mW
安装方式 Surface Mount
引脚数 3
封装 SC-75-3
封装 SC-75-3
材质 Silicon
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
S2SC4617G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
2SC4617G 安森美 | 完全替代 | S2SC4617G和2SC4617G的区别 |
2SC4617T1G 安森美 | 类似代替 | S2SC4617G和2SC4617T1G的区别 |