晶体管 - 双极 BJT - 单 NPN 45V 100mA 100MHz 150mW 表面贴装型 SC-88/SC70-6/SOT-363
- 双极 BJT - 单 NPN 45 V 100 mA 100MHz 150 mW 表面贴装型 SC-88/SC70-6/SOT-363
得捷:
TRANS NPN 45V 0.1A SC88/SC70-6
立创商城:
SBC847BWT1G
艾睿:
Design various electronic circuits with this versatile NPN SBC847BWT1G GP BJT from ON Semiconductor. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.
安富利:
Trans GP BJT NPN 45V 0.1A 3-Pin SC-70 T/R
无卤素状态 Halogen Free
极性 NPN
耗散功率 150 mW
击穿电压集电极-发射极 45 V
集电极最大允许电流 0.1A
最小电流放大倍数hFE 200 @2mA, 5V
额定功率Max 150 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 150 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-70
封装 SOT-70
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
SBC847BWT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
NST847BF3T5G 安森美 | 功能相似 | SBC847BWT1G和NST847BF3T5G的区别 |
2DC4617R-7 美台 | 功能相似 | SBC847BWT1G和2DC4617R-7的区别 |
BC847BW Diotec Semiconductor | 功能相似 | SBC847BWT1G和BC847BW的区别 |