SBC846BWT1G

ON SEMICONDUCTOR  SBC846BWT1G  Bipolar BJT Single Transistor, AEC-Q101, NPN, 65 V, 100 MHz, 200 mW, 100 mA, 200 hFE 新

- 双极 BJT - 单 NPN 65 V 100 mA 100MHz 150 mW 表面贴装型 SC-70-3（SOT323）

欧时:
SS SC70 GP XSTR NPN 65V

得捷:
TRANS NPN 65V 0.1A SC70-3

立创商城:
SBC846BWT1G

e络盟:
Bipolar BJT Single Transistor, NPN, 65 V, 100 MHz, 200 mW, 100 mA, 200 hFE

艾睿:
The versatility of this NPN SBC846BWT1G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V.

安富利:
Trans GP BJT NPN 65V 0.1A 3-Pin SC-70 T/R

Chip1Stop:
Trans GP BJT NPN 65V 0.1A 150mW Automotive 3-Pin SC-70 T/R

Verical:
Trans GP BJT NPN 65V 0.1A 150mW Automotive 3-Pin SC-70 T/R

Newark:
# ON SEMICONDUCTOR  SBC846BWT1G  TRANSISTOR, BIPOL, NPN, 65V