SMMBTA42LT1G

单晶体管 双极, NPN, 300 V, 50 MHz, 225 mW, 500 mA, 40 hFE

Features

•AEC−Q101 Qualified and PPAP Capable

•S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

得捷:
TRANS NPN 300V 0.5A SOT23-3

立创商城:
SMMBTA42LT1G

贸泽:
双极晶体管 - 双极结型晶体管BJT SS HV XSTR SPCL TR

e络盟:
单晶体管 双极, NPN, 300 V, 50 MHz, 225 mW, 500 mA, 40 hFE

艾睿:
Implement this versatile NPN SMMBTA42LT1G GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans GP BJT NPN 300V 0.5A 3-Pin SOT-23 T/R

Verical:
Trans GP BJT NPN 300V 0.5A 300mW Automotive 3-Pin SOT-23 T/R

Win Source:
TRANS NPN 300V 0.5A SOT23