SBC856BDW1T1G

ON SEMICONDUCTOR  SBC856BDW1T1G  双极晶体管阵列, 双PNP, -65 V, 380 mW, 100 mA, 150 hFE, SOT-363 新

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 380 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.