SBC847BPDW1T1G

SBC847BPDW1T1G 编带

- 双极 BJT - 阵列 NPN，PNP 45V 100mA 100MHz 380mW 表面贴装型 SC-88/SC70-6/SOT-363

欧时:
ON Semiconductor, SBC847BPDW1T1G

得捷:
TRANS NPN/PNP 45V 0.1A SOT-363

立创商城:
SBC847BPDW1T1G

e络盟:
双极晶体管阵列, NPN, PNP, 45 V, 380 mW, 100 mA, 200 hFE, SOT-363

艾睿:
The npn and PNP SBC847BPDW1T1G general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor&s;s maximum emitter base voltage is 6@NPN|5@PNP V. Its maximum power dissipation is 380 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6@NPN|5@PNP V.

安富利:
Trans GP BJT NPN/PNP 45V 0.1A 6-Pin SOT-363 T/R

Chip1Stop:
Trans GP BJT NPN/PNP 45V 0.1A Automotive 6-Pin SOT-363 T/R

Verical:
Trans GP BJT NPN/PNP 45V 0.1A 380mW Automotive 6-Pin SC-88 T/R