SOT-23 NPN 45V 0.8A
Jump-start your electronic circuit design with this versatile NPN GP BJT from . This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
频率 100 MHz
极性 NPN
耗散功率 0.3 W
击穿电压集电极-发射极 45 V
集电极最大允许电流 0.8A
最小电流放大倍数hFE 160 @100mA, 1V
额定功率Max 300 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 300 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
封装 SOT-23-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
SBCW66GLT1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
BCW66GLT1G 安森美 | 类似代替 | SBCW66GLT1G和BCW66GLT1G的区别 |
BCW66GLT3G 安森美 | 类似代替 | SBCW66GLT1G和BCW66GLT3G的区别 |
BC817-25T116 罗姆半导体 | 类似代替 | SBCW66GLT1G和BC817-25T116的区别 |