SMUN5235DW1T1G

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SMUN5235DW1T1G概述

MUN5235DW1 系列 50 V 100 mA 双 NPN 偏置 电阻 晶体管 - SOT-363

brings you their latest NPN digital transistor, a component that can easily provide you with most of the features of traditional BJT"s while maintaining a digital form. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It is made in a dual configuration. This transistor has an operating temperature range of -55 °C to 150 °C.

SMUN5235DW1T1G中文资料参数规格
技术参数

极性 NPN

耗散功率 360 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 80 @5mA, 10V

额定功率Max 187 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 385 mW

封装参数

安装方式 Surface Mount

引脚数 6

封装 SC-70-6

外形尺寸

封装 SC-70-6

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

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型号: SMUN5235DW1T1G
描述:MUN5235DW1 系列 50 V 100 mA 双 NPN 偏置 电阻 晶体管 - SOT-363
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