





MUN5235DW1 系列 50 V 100 mA 双 NPN 偏置 电阻 晶体管 - SOT-363
brings you their latest NPN digital transistor, a component that can easily provide you with most of the features of traditional BJT"s while maintaining a digital form. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It is made in a dual configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
极性 NPN
耗散功率 360 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 80 @5mA, 10V
额定功率Max 187 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 385 mW
安装方式 Surface Mount
引脚数 6
封装 SC-70-6
封装 SC-70-6
工作温度 -55℃ ~ 150℃
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
SMUN5235DW1T1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
MUN5235DW1T1G 安森美 | 类似代替 | SMUN5235DW1T1G和MUN5235DW1T1G的区别 |
SMUN5235DW1T3G 安森美 | 功能相似 | SMUN5235DW1T1G和SMUN5235DW1T3G的区别 |
MUN5235DW1T1 安森美 | 功能相似 | SMUN5235DW1T1G和MUN5235DW1T1的区别 |