MUN5111DW1T1G 50 V 100 mA 双 PNP 偏置 电阻 晶体管 - SOT-363
Dual PNP Bias Resistor Transistors R1 = 10 kΩ, R2 = 10 kΩ
PNP Transistors with Monolithic Bias Resistor Network
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Features
• S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
无卤素状态 Halogen Free
极性 PNP
耗散功率 0.385 W
击穿电压集电极-发射极 50 V
集电极最大允许电流 100mA
最小电流放大倍数hFE 35 @5mA, 10V
额定功率Max 385 mW
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 385 mW
安装方式 Surface Mount
引脚数 6
封装 SC-70-6
封装 SC-70-6
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
SMUN5111DW1T1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
PUMB11,115 安世 | 功能相似 | SMUN5111DW1T1G和PUMB11,115的区别 |