SMUN5111DW1T1G

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SMUN5111DW1T1G概述

MUN5111DW1T1G 50 V 100 mA 双 PNP 偏置 电阻 晶体管 - SOT-363

Dual PNP Bias Resistor Transistors R1 = 10 kΩ, R2 = 10 kΩ

PNP Transistors with Monolithic Bias Resistor Network

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Features

• S and NSV Prefix for Automotive and Other Applications

   Requiring Unique Site and Control Change Requirements;

   AEC-Q101 Qualified and PPAP Capable

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

SMUN5111DW1T1G中文资料参数规格
技术参数

无卤素状态 Halogen Free

极性 PNP

耗散功率 0.385 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 35 @5mA, 10V

额定功率Max 385 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 385 mW

封装参数

安装方式 Surface Mount

引脚数 6

封装 SC-70-6

外形尺寸

封装 SC-70-6

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买SMUN5111DW1T1G
型号: SMUN5111DW1T1G
描述:MUN5111DW1T1G 50 V 100 mA 双 PNP 偏置 电阻 晶体管 - SOT-363
替代型号SMUN5111DW1T1G
型号/品牌 代替类型 替代型号对比

SMUN5111DW1T1G

ON Semiconductor 安森美

当前型号

当前型号

PUMB11,115

安世

功能相似

SMUN5111DW1T1G和PUMB11,115的区别

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