SMUN5311DW1T1G

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SMUN5311DW1T1G概述

ON SEMICONDUCTOR  SMUN5311DW1T1G  新

In contrast to traditional transistors, "s npn and PNP digital transistor"s can be used in a wide variety of digital signal processing circuits. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It is made in a dual configuration. This transistor has an operating temperature range of -55 °C to 150 °C.

SMUN5311DW1T1G中文资料参数规格
技术参数

无卤素状态 Halogen Free

极性 NPN+PNP

耗散功率 0.385 W

击穿电压集电极-发射极 50 V

集电极最大允许电流 100mA

最小电流放大倍数hFE 35 @5mA, 10V

额定功率Max 250 mW

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 385 mW

封装参数

安装方式 Surface Mount

引脚数 6

封装 SC-70-6

外形尺寸

封装 SC-70-6

物理参数

工作温度 -55℃ ~ 150℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

REACH SVHC版本 2015/12/17

海关信息

ECCN代码 EAR99

数据手册

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型号: SMUN5311DW1T1G
描述:ON SEMICONDUCTOR  SMUN5311DW1T1G  新
替代型号SMUN5311DW1T1G
型号/品牌 代替类型 替代型号对比

SMUN5311DW1T1G

ON Semiconductor 安森美

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SMUN5311DW1T2G

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