SI2302DDS-T1-GE3

VISHAY  SI2302DDS-T1-GE3  晶体管, MOSFET, N沟道, 2.6 A, 20 V, 0.045 ohm, 4.5 V

The is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch and DC-to-DC converter applications.

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100% Rg tested

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Halogen-free

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-55 to 150°C Operating temperature range

艾睿:
Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R

富昌:
SI2302DDS 系列 N沟道 20 V 2.6 A 0.067 Ω 3.5 nC 表面贴装 Mosfet - SOT-23

Chip1Stop:
Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R

Verical:
Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R

Newark:
# VISHAY  SI2302DDS-T1-GE3  MOSFET Transistor, N Channel, 2.6 A, 20 V, 0.045 ohm, 4.5 V

儒卓力:
**N-CHANNEL-FET 2,6A 20V SOT23 **

力源芯城:
20V,2.6A,0.075Ω,N沟道功率MOSFET