SBCP53T1G

单晶体管 双极, PNP, -80 V, 50 MHz, 1.5 W, 1.5 A, 25 hFE

This PNP general purpose bipolar junction transistor from is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.