STMicroelectronics### 双极晶体管,STMicroelectronicsSTMicroelectronics 的各种 NPN 和 PNP 双极性晶体管,包括通用、达林顿、功率和高电压设备,采用表面安装和通孔封装。
高电压,STMicroelectronics
### 双极晶体管,STMicroelectronics
STMicroelectronics 的各种 NPN 和 PNP ,包括通用、达林顿、功率和高电压设备,采用表面安装和通孔封装。
得捷:
TRANS PNP 500V 0.5A SOT23-3
欧时:
STMicroelectronics STR2550 , PNP 晶体管, 500 mA, Vce=500 V, HFE:10, 3引脚 SOT-23封装
立创商城:
PNP 500V 500mA
艾睿:
Compared to other transistors, the PNP STR2550 general purpose bipolar junction transistor, developed by STMicroelectronics, can offer a high-voltage solution in your circuit. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 500 V and a maximum emitter base voltage of 7 V.
安富利:
Trans GP BJT PNP 500V 0.5A 3-Pin SOT-23 T/R
Chip1Stop:
Trans GP BJT PNP 500V 0.5A 3-Pin SOT-23 T/R
Verical:
Trans GP BJT PNP 500V 0.5A 500mW 3-Pin SOT-23 T/R
Newark:
# STMICROELECTRONICS STR2550 TRANSISTOR, BIPOL, PNP, -500V, SOT-23-3 New
Win Source:
TRANS PNP 500V 0.5A SOT-23
针脚数 3
极性 PNP
耗散功率 500 mW
击穿电压集电极-发射极 500 V
集电极最大允许电流 0.5A
最小电流放大倍数hFE 100 @50mA, 10V
额定功率Max 500 mW
直流电流增益hFE 10
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 500 mW
安装方式 Surface Mount
引脚数 3
封装 SOT-23-3
长度 3.04 mm
宽度 1.75 mm
高度 1.3 mm
封装 SOT-23-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99