NPN硅外延型晶体管 NPN Silicon Epitaxial Transistor
Implement this versatile NPN GP BJT from into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
频率 130 MHz
针脚数 4
极性 NPN
耗散功率 1.5 W
增益频宽积 130 MHz
击穿电压集电极-发射极 80 V
集电极最大允许电流 1A
最小电流放大倍数hFE 63 @150mA, 2V
最大电流放大倍数hFE 160 @150mA, 2V
额定功率Max 1.5 W
直流电流增益hFE 25
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 1500 mW
安装方式 Surface Mount
引脚数 4
封装 TO-261-4
封装 TO-261-4
材质 Silicon
工作温度 -65℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
SBCP56-10T1G ON Semiconductor 安森美 | 当前型号 | 当前型号 |
BCP56-10T1G 安森美 | 类似代替 | SBCP56-10T1G和BCP56-10T1G的区别 |
BCP5610TA 美台 | 功能相似 | SBCP56-10T1G和BCP5610TA的区别 |
BCP 56-10 E6433 英飞凌 | 功能相似 | SBCP56-10T1G和BCP 56-10 E6433的区别 |