中等电流，高性能，低电压PNP晶体管 Medium current,high performance,low voltage PNP transistor
Do you require a transistor in your circuit operating in the high-voltage range? This PNP general purpose bipolar junction transistor, developed by STMicroelectronics, is your solution. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 900 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.
频率 100 MHz
额定电压DC -60.0 V
额定电流 -3.00 A
极性 PNP
耗散功率 900 mW
增益频宽积 100 MHz
击穿电压集电极-发射极 30 V
集电极最大允许电流 3A
最小电流放大倍数hFE 100 @500mA, 2V
额定功率Max 900 mW
直流电流增益hFE 200
工作温度Max 150 ℃
工作温度Min 65 ℃
耗散功率Max 900 mW
安装方式 Through Hole
引脚数 3
封装 TO-226-3
长度 4.8 mm
宽度 3.8 mm
高度 4.5 mm
封装 TO-226-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
ECCN代码 EAR99