STN724

NPN型中功率晶体管 NPN MEDIUM POWER TRANSISTORS

Bipolar BJT Transistor NPN 30V 3A 100MHz 1.6W Surface Mount SOT-223

得捷:
TRANS NPN 30V 3A SOT223

艾睿:
Implement this versatile NPN STN724 GP BJT from STMicroelectronics into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1600 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

Chip1Stop:
Trans GP BJT NPN 30V 3A 4-Pin3+Tab SOT-223 T/R