SN74CBT6845CRGYR

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SN74CBT6845CRGYR概述

具有预充电输出的5 V BUS开关8位FET总线开关-2 -V冲保护 8-BIT FET BUS SWITCH WITH PRECHARGED OUTPUTS 5-V BUS SWITCH WITH -2-V UNDERSHOOT PROTECTION

The SN74CBT6845C is a high-speed TTL-compatible FET bus switch with low ON-state resistance ron, allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT6845C provides protection for undershoot up to –2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state. The device also precharges the B port to a user-selectable bias voltage BIASV to minimize live-insertion noise.

The SN74CBT6845C is an 8-bit bus switch with a single output-enable OE\\\\ input. When OE\ is low, the 8-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE\ is high, the 8-bit bus switch is OFF, and a high-impedance state exists between the A and B ports. The B port is precharged to BIASV through the equivalent of a 10-k resistor when OE\ is high, or if the device is powered down VCC = 0 V.

During insertion or removal of a card into or from an active bus, the card’s output voltage may be close to GND. When the connector pins make contact, the card’s parasitic capacitance tries to force the bus signal to GND, creating a possible glitch on the active bus. This glitching effect can be reduced by using a bus switch with precharged bias voltage BIASV of the bus switch equal to the input threshold voltage level of the receivers on the active bus. This method will ensure that any glitch produced by insertion or removal of the card will not cross the input threshold region of the receivers on the active bus, minimizing the effects of live-insertion noise.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

SN74CBT6845CRGYR中文资料参数规格
技术参数

电源电压DC 4.00V ~ 5.50V

输出电流 64.0 mA

触点类型 SPST

位数 8

传送延迟时间 240 ps

电压波节 4.00 V, 5.00 V

带宽 200 MHz

工作温度Max 85 ℃

工作温度Min -40 ℃

电源电压 4.5V ~ 5.5V

封装参数

安装方式 Surface Mount

引脚数 20

封装 VQFN-20

外形尺寸

长度 4.5 mm

宽度 3.5 mm

高度 0.8 mm

封装 VQFN-20

物理参数

工作温度 -40℃ ~ 85℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

SN74CBT6845CRGYR引脚图与封装图
SN74CBT6845CRGYR引脚图
SN74CBT6845CRGYR封装图
SN74CBT6845CRGYR封装焊盘图
在线购买SN74CBT6845CRGYR
型号: SN74CBT6845CRGYR
制造商: TI 德州仪器
描述:具有预充电输出的5 V BUS开关8位FET总线开关-2 -V冲保护 8-BIT FET BUS SWITCH WITH PRECHARGED OUTPUTS 5-V BUS SWITCH WITH -2-V UNDERSHOOT PROTECTION
替代型号SN74CBT6845CRGYR
型号/品牌 代替类型 替代型号对比

SN74CBT6845CRGYR

TI 德州仪器

当前型号

当前型号

SN74CBT6845CRGYRG4

德州仪器

完全替代

SN74CBT6845CRGYR和SN74CBT6845CRGYRG4的区别

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