SN74CB3Q6800DGVR

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SN74CB3Q6800DGVR概述

与PRECHAGED产出2.5V / 3.3V低电压高带宽总线开关10位FET总线开关 10 BIT FET BUS SWITCH WITH PRECHAGED OUTPUTS 2.5V/3.3V LOW VOLTAGE HIGH BANDWIDTH BUS SWITCH

The SN74CB3Q6800 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance ron. The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output I/O ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q6800 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q6800 is a 10-bit bus switch with a single output-enable ON\\\\ input. When ON\ is low, the 10-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When ON\ is high, the 10-bit bus switch is OFF and a high-impedance state exists between the A and B ports. The B port is precharged to bias voltage BIASV through the equivalent of a 10-k resistor when ON\ is high, or if the device is powered down VCC = 0 V.

During insertion or removal of a card into or from an active bus, the card’s output voltage may be close to GND. When the connector pins make contact, the card’s parasitic capacitance tries to force the bus signal to GND, creating a possible glitch on the active bus. This glitching effect can be reduced by using a bus switch with precharged bias voltage BIASV of the bus switch equal to the input threshold voltage level of the receivers on the active bus. This method will ensure that any glitch produced by insertion or removal of the card will not cross the input threshold region of the receivers on the active bus, minimizing the effects of live-insertion noise.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, ON\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

SN74CB3Q6800DGVR中文资料参数规格
技术参数

电源电压DC 2.30V ~ 3.60V

输出电流 30.0 mA

触点类型 SPST

位数 10

传送延迟时间 225 ps

电压波节 2.50 V, 3.30 V

静态电流 750 µA

带宽 500 MHz

工作温度Max 85 ℃

工作温度Min -40 ℃

电源电压 2.3V ~ 3.6V

封装参数

安装方式 Surface Mount

引脚数 24

封装 TVSOP-24

外形尺寸

封装 TVSOP-24

物理参数

工作温度 -40℃ ~ 85℃

其他

产品生命周期 Active

包装方式 Tape & Reel TR

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

SN74CB3Q6800DGVR引脚图与封装图
SN74CB3Q6800DGVR引脚图
SN74CB3Q6800DGVR封装图
SN74CB3Q6800DGVR封装焊盘图
在线购买SN74CB3Q6800DGVR
型号: SN74CB3Q6800DGVR
制造商: TI 德州仪器
描述:与PRECHAGED产出2.5V / 3.3V低电压高带宽总线开关10位FET总线开关 10 BIT FET BUS SWITCH WITH PRECHAGED OUTPUTS 2.5V/3.3V LOW VOLTAGE HIGH BANDWIDTH BUS SWITCH
替代型号SN74CB3Q6800DGVR
型号/品牌 代替类型 替代型号对比

SN74CB3Q6800DGVR

TI 德州仪器

当前型号

当前型号

SN74CB3Q6800PWR

德州仪器

完全替代

SN74CB3Q6800DGVR和SN74CB3Q6800PWR的区别

SN74CB3Q6800PWG4

德州仪器

完全替代

SN74CB3Q6800DGVR和SN74CB3Q6800PWG4的区别

74CB3Q6800DGVRG4

德州仪器

完全替代

SN74CB3Q6800DGVR和74CB3Q6800DGVRG4的区别

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