DPAK N-CH 600V 3.2A
表面贴装型 N 通道 3.2A（Tc） 38W（Tc） PG-TO252-3
得捷:
MOSFET N-CH 600V 3.2A TO252-3
贸泽:
MOSFET LOW POWER_LEGACY
艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The SPD03N60S5BTMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 38000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
Verical:
Trans MOSFET N-CH 600V 3.2A 3-Pin2+Tab DPAK T/R
Win Source:
MOSFET N-CH 600V 3.2A TO-252
极性 N-CH
耗散功率 38 W
漏源极电压Vds 600 V
连续漏极电流Ids 3.2A
上升时间 25 ns
输入电容Ciss 420pF @25VVds
额定功率Max 38 W
下降时间 15 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 38W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.5 mm
宽度 6.22 mm
高度 2.3 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准
含铅标准 无铅