SPZT2907AT1G

PNP硅外延晶体管 PNP Silicon Epitaxial Transistor

- 双极 BJT - 单 PNP 200MHz 表面贴装型 SOT-223-3

得捷:
TRANS PNP 60V 0.6A SOT223

立创商城:
SPZT2907AT1G

e络盟:
单晶体管 双极, PNP, -60 V, 200 MHz, 1.5 W, -600 mA, 50 hFE

艾睿:
ON Semiconductor has the solution to your circuit&s;s high-voltage requirements with their PNP SPZT2907AT1G general purpose bipolar junction transistor. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

安富利:
Trans GP BJT PNP 60V 0.6A 4-Pin3+Tab SOT-223 T/R

Chip1Stop:
Trans GP BJT PNP 60V 0.6A 1500mW Automotive 4-Pin3+Tab SOT-223 T/R

Verical:
Trans GP BJT PNP 60V 0.6A 1500mW Automotive 4-Pin3+Tab SOT-223 T/R