Trans MOSFET N-CH 30V 4A 6Pin UDFN EP
Use "s power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 2000 mW. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes u-mos vii-h technology.
通道数 2
漏源极电阻 64 mΩ
耗散功率 1 W
阈值电压 1.3V ~ 2.5V
漏源极电压Vds 30 V
漏源击穿电压 30 V
输入电容Ciss 280pF @15VVds
额定功率Max 1 W
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 2000 mW
安装方式 Surface Mount
引脚数 6
封装 UDFN-6
长度 2 mm
宽度 2 mm
高度 0.75 mm
封装 UDFN-6
工作温度 150℃ TJ
产品生命周期 Discontinued at Digi-Key
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 PB free