SMBJ26CA-E3/52

TRANSZORB® 瞬态电压抑制器 SMT 双向 600W，Vishay Semiconductor薄型 DO-214AA SMBJ 封装 极佳的夹持能力 非常快的响应时间 低电阻，带增量浪涌 ### 瞬态电压抑制器，Vishay Semiconductor

42.1V Clamp 14.3A Ipp Tvs Diode Surface Mount DO-214AA SMBJ

得捷:
TVS DIODE 26V 42.1V DO214AA

贸泽:
ESD Suppressors / TVS Diodes 600W 26V 5% Bidir

艾睿:
Diode TVS Single Bi-Dir 26V 600W 2-Pin SMB T/R

安富利:
* Maximum peak pulse surge current IPPM 14.3 A * Low profile package * Ideal for automated placement * Glass passivated chip junction * Available in uni-directional and bi-directional * 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate duty cycle: 0.01 % * Excellent clamping capability * Very fast response time * Low incremental surge resistance * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C * AEC-Q101 qualified

Chip1Stop:
Diode TVS Single Bi-Dir 26V 600W 2-Pin SMB T/R

Verical:
Diode TVS Single Bi-Dir 26V 600W 2-Pin SMB T/R

Newark:
# VISHAY  SMBJ26CA-E3/52  TVS Diode, TRANSZORB SMBJ Series, Bidirectional, 26 V, 42.1 V, DO-214AA, 2 Pins

儒卓力:
**TRANSIL BI 0,6KW 30V SMB **