DPAK NPN 350V 4A
- 双极 BJT - 单 NPN - 达林顿 350 V 4 A - 35 W 表面贴装型 DPAK
得捷:
TRANS NPN DARL 350V 4A DPAK
艾睿:
Do you need a device that can yield much higher current gains? Thanks to STMicroelectronics, the NPN STD901T Darlington transistor can amplify a current to meet your needs. This product&s;s maximum continuous DC collector current is 4 A, while its minimum DC current gain is 500@4A@2 V|1800@2A@2V. It has a maximum collector emitter saturation voltage of 2@20mA@2A V. This Darlington transistor array&s;s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 1.8@20mA@2A V. Its maximum power dissipation is 35000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 5 V.
安富利:
Trans Darlington NPN 350V 4A 3-Pin2+Tab DPAK T/R
Verical:
Trans Darlington NPN 350V 4A 35000mW 3-Pin2+Tab DPAK T/R
DeviceMart:
TRANSISTOR NPN 350V 4A DPAK
Win Source:
TRANS NPN DARL 350V 4A DPAK / Bipolar BJT Transistor NPN - Darlington 350 V 4 A 35 W Surface Mount DPAK
极性 NPN
耗散功率 35 W
击穿电压集电极-发射极 350 V
集电极最大允许电流 4A
最小电流放大倍数hFE 1800 @2A, 2V
额定功率Max 35 W
下降时间 1.5 µs
工作温度Max 150 ℃
工作温度Min -65 ℃
耗散功率Max 35000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
封装 TO-252-3
工作温度 150℃ TJ
产品生命周期 Active
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
ECCN代码 EAR99
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
STD901T ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
NJD35N04G 安森美 | 功能相似 | STD901T和NJD35N04G的区别 |