N沟道100V - 0.065欧姆 - 4A SO- 8 STripFET⑩ II功率MOSFET N-CHANNEL 100V - 0.065 ohm - 4A SO-8 STripFET⑩ II POWER MOSFET
Compared to traditional transistors, power MOSFETs, developed by STMicroelectronics, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
额定电压DC 100 V
额定电流 4.00 A
漏源极电阻 65.0 mΩ
极性 N-Channel
耗散功率 2.5 W
漏源极电压Vds 100 V
漏源击穿电压 100 V
栅源击穿电压 ±20.0 V
连续漏极电流Ids 4.00 A
上升时间 45 ns
输入电容Ciss 870pF @25VVds
额定功率Max 2.5 W
下降时间 17 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5W Ta
安装方式 Surface Mount
引脚数 8
封装 SOIC-8
封装 SOIC-8
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
ECCN代码 EAR99
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
STS4NF100 ST Microelectronics 意法半导体 | 当前型号 | 当前型号 |
IRF7452TRPBF 英飞凌 | 功能相似 | STS4NF100和IRF7452TRPBF的区别 |
FDS3590 飞兆/仙童 | 功能相似 | STS4NF100和FDS3590的区别 |
FDS3692 飞兆/仙童 | 功能相似 | STS4NF100和FDS3692的区别 |