SPP03N60C3XKSA1

SPP03N60C3XKSA1图片1
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SPP03N60C3XKSA1概述

TO-220 N-CH 650V 3.2A

N-Channel 600V 3.2A Tc 38W Tc Through Hole PG-TO220-3-1


得捷:
LOW POWER_LEGACY


艾睿:
This SPP03N60C3XKSA1 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 38000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.


Verical:
Trans MOSFET N-CH 650V 3.2A 3-Pin3+Tab TO-220 Tube


SPP03N60C3XKSA1中文资料参数规格
技术参数

极性 N-CH

耗散功率 38 W

漏源极电压Vds 650 V

连续漏极电流Ids 3.2A

上升时间 3 ns

输入电容Ciss 400pF @25VVds

下降时间 12 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 38000 mW

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

封装 TO-220-3

其他

产品生命周期 Obsolete

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买SPP03N60C3XKSA1
型号: SPP03N60C3XKSA1
描述:TO-220 N-CH 650V 3.2A

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