SM15T10CA-E3/9AT

SM15T10CA-E3/9AT图片1
SM15T10CA-E3/9AT图片2
SM15T10CA-E3/9AT概述

Diode TVS Single Bi-Dir 8.55V 1.5kW 2Pin SMC T/R

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 1500 W peak pulse power capability with a 10/1000 μs waveform

• Excellent clamping capability

• Low inductance

• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

• AEC-Q101 qualified

• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

  Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication.

SM15T10CA-E3/9AT中文资料参数规格
技术参数

工作电压 8.55 V

击穿电压 9.5 V

钳位电压 18.6 V

脉冲峰值功率 1500 W

最小反向击穿电压 9.5 V

封装参数

安装方式 Surface Mount

封装 DO-214AB

外形尺寸

封装 DO-214AB

物理参数

工作温度 -65℃ ~ 150℃ TJ

其他

包装方式 Tape & Reel TR

制造应用 通用

符合标准

RoHS标准 Non-Compliant

含铅标准 Lead Free

数据手册

在线购买SM15T10CA-E3/9AT
型号: SM15T10CA-E3/9AT
描述:Diode TVS Single Bi-Dir 8.55V 1.5kW 2Pin SMC T/R
替代型号SM15T10CA-E3/9AT
型号/品牌 代替类型 替代型号对比

SM15T10CA-E3/9AT

Vishay Semiconductor 威世

当前型号

当前型号

SM15T10CAHE3/57T

威世

完全替代

SM15T10CA-E3/9AT和SM15T10CAHE3/57T的区别

SM15T10CA-E3/57T

威世

功能相似

SM15T10CA-E3/9AT和SM15T10CA-E3/57T的区别

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